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Antimonide based (Sb) compound semiconductors are promising for complementary logic applications due to their advantageous electron and hole transport properties. Ultra-thin device layers of compressively strained InSb are of particular interest for p-channel MOSFETs due to their reduced hole transport mass and higher mobility compared to strained InGaSb quantum well (QW) two dimensional hole gas...
Tri-gate bulk MOSFETs are realized using a simple shallow-trench-isolation (STI) oxide recess approach. The tri-gate structure together with a retrograde body doping profile provides for superior electrostatic integrity, particularly for narrow fin widths, to reduce variability in transistor performance. The benefits of tri-gate bulk MOSFET technology for 28 nm-node 6-T SRAM cells (0.149 um2 bit-cell...
The effect of direct source-to-drain tunneling (DSDT) on dopant-segregated Schottky (DSS) source/drain double-gate MOSFET design is investigated. In the DSDT regime, graded source/drain doping profiles offer improved device performance due to increased DSDT barrier width. Non-zero Schottky barrier heights also offer some performance improvement for the same reason, but high-k gate-sidewall spacers...
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