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We report on a new 3-DOF CMOS-MEMS electrothermal probe, featuring embedded piezoresistive sensors. These probes have the potential to be used independently for general 3-DOF nanoscale manipulation/manufacturing/scanning without external actuation and sensing. In this probe design, 3-DOF piezoresistive sensors are used to track probe actuation and applied force in all three directions, and thermal...
We report on high current, low contact resistance, platinum-coated, lever-based CMOS-MEMS electrothermal probes with embedded displacement and force sensors for MEMS Instrumented Self-Configuring Integrated Circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure ICs, mainly RF ICs such as inductors, by mechanically addressing and passing current pulses through resistance...
We describe multiple embedded polysilicon resistive sensors in CMOS-MEMS electrothermal probes as a step toward creating probe arrays for passing current on ICs to reconfigure resistance change (RC) vias. When not in contact, a low-resistivity unsilicided polysilicon (LP) resistor detects probe displacement indirectly through the temperature coefficient of resistance (TCR) effect. When in contact...
We report on new lever-based CMOS-MEMS electrothermal probes for memory-intensive self-configuring integrated circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure ICs, mainly RF ICs such as inductors, by mechanically addressing and passing current through resistance change (RC) vias embedded within the chip circuitry. The lever-based actuation causes the probe tips...
We report on our progress on the development of CMOS-MEMS electrothermal conductive probes for memory-intensive self-configuring integrated circuits (MISCICs). The MISCIC vision is to use MEMS conductive probes to reconfigure circuits by mechanically addressing and passing current through resistance change vias embedded within the chip circuitry. Cantilevered probes are designed with 1, 4, 9, 16 and...
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