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A robust poly opening polish (POP) CMP for replacement metal gate (RMG) application has been developed to meet the criteria of High-k metal gate (HKMG) devices at 28nm technology node. From the previous performance of POP CMP, the uniformity and loading was an important factor of product with HKMG. The polish rate and selective of platen 2, which were key physical characters, was taken to study by...
Thin LaTiON gate dielectric is deposited on Ge (100) substrate by reactive co-sputtering of La2O3 and Ti targets under different Ar/N2 ratios of 24/3, 24/6, 24/12, and 24/18, and their electrical properties are investigated and compared. Results show that the LaTiON gate-dielectric Ge MOS capacitor prepared at an Ar/N2 ratio of 24/6 exhibits highest relative permittivity, smallest capacitance equivalent...
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