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The hole mobility in a high Ge-content (110) SiGe inversion layer is measured and simulated by a split capacitance–voltage method and a quantized k⇀·p⇀ method, respectively. The calibrated model reproduces our experimental channel mobility measurements for the biaxial compressive strain SiGe on (110) substrate. We also explore the impact of external mechanical uniaxial stress on the SiGe (110) p-channel...
Using a TCAD simulator, we examine the oxide thickness effect on electrical characteristics of the SiGe HBT on SOI substrates. We have investigated this effect on Early voltage, cut-off frequency, and maximum oscillation frequency for SiGe HBT on SOI substrate. It is found that the maximum oscillation frequency (fmax) of SiGe HBT on SOI substrate is much better than that of conventional SiGe HBT....
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