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We demonstrate the coupling of Monte Carlo sputter simulation with feature-scale simulation of profile evolution during sputter etching. With the Monte Carlo sputter simulation, the dependence of the sputter yield on the angle of incidence and on the energy of ions impinging onto the surface is determined. The yield curves obtained thereby are fed into a feature-scale etching profile simulator which...
We demonstrate the coupling of plasma reactor equipment simulation and feature-scale profile simulation for dry etching of silicon in a chlorine plasma. Equipment simulation delivers fluxes of ions and neutrals, as well as the angular characteristics of the ions. These quantities are fed into a feature-scale simulator based on a Monte Carlo approach for determining relevant quantities on the feature...
With a novel delineation technique, the increase in dopant concentration due to ions which have been scattered out of a vertical mask edge during ion implantation was demonstrated. The equiconcentration lines show that the implanted concentration near the mask edge is greater than that in the middle of the implantation window. This effect could be simulated qualitatively with a Monte Carlo simulation...
Is order to establish a rigorous test for the various models used to simulate ion implantation in crystalline silicon. we have implanted 17-150 keV boron ions with low doses into ≪111≫ and ≪100≫ silicon in channeling direction. Simulations using the program MARLOWE show that. impact parameter dependent electronic stopping is essential. The binary collision approximation is fully, justified. Moliere...
For the analytical description of doping profiles after ion implantation, good multilayer models are required to describe the implantation through thin layers, e.g. a scattering oxide or non-vertical mask edges. In this paper, benefits and drawbacks of some published models are discussed, and an improvement is suggested. Comparisons with results from Monte Carlo simulations and SIMS measurements are...
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