The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A simulation study of lithography induced layout variations in 6-T SRAM cells is presented. Lithography simulations of a complete 6-T SRAM cell layout, including active n+/p+ regions layer and poly-gate layer were performed. The smallest feature size was assumed to be 45 nm. 76 positions of the projector focus were simulated for each layer in total. TCAD simulations of 32nm single gate FD SOI MOSFETs...
A new method for the three-dimensional (3-D) simulation of LPCVD using a modified string algorithm combined with a redistribution model is presented. Simulation results for rectangular holes are shown. The step coverage predicted by 3-D simulations is compared to step coverages from 2-D simulations. It is shown that the considerable differences observed require the use of 3-D algorithms for the simulation...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.