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We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes both with high performances. The gain-bandwidth product was measured as high as 340 GHz and the receiver sensitivity was -28 dBm and -30.4 dBm for mesa-and waveguide-type devices, respectively.
A separate-absorption-charge-multiplication Ge/Si avalanche photodiode with very high gain-bandwidth-product over 800 GHz is reported. The origin of this dramatically high value is explained using well consentient measurement and simulation results.
In this paper we review recent advancements in the performance of avalanche photodiodes (APDs). APDs designed for fiber optic receivers, low-level ultra-violet detection, and Geiger-mode single photon detectors will be discussed.
We report a 4H-SiC PIN recessed-window avalanche photodiode with a peak responsitivity of 136 mA/W (external quantum efficiency = 60%) at lambda = 262 nm, corresponding to more than a 50% increase in external quantum efficiency compared to nonrecessed structures. The dark current was 90 pA at a photocurrent gain of 1000. Avalanche gains of over 106, k ~ 0.1, and a spatially uniform response were achieved.
An interdigitated Ge-on-Si photodetector has been fabricated, and achieved 73% quantum efficiency at 1.3 mum. The internal quantum efficiency is close to unity due to the high quality Ge film grown with thin SiGe buffer layers
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