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Metallic diffusion through high-K HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phim,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HflON and Ir/HfAlON at 1.7 nm EOT. Good dual phim,eff of 4.15 and 4.9 eV are also obtained in YbxSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature
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