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The fabrication of high transconductance AlGaN/GaN high electron mobility transistors (HEMTs) grown on high-resistivity silicon substrate is reported with an AlGaN barrier thickness of only 12.5 nm. A maximum DC current density of 655 mA/mm, a current gain cutoff frequency (FT) of 75 GHz and a power-gain cutoff frequency (FMAX) of 125 GHz are obtained for a 0.125 μm gate length transistor. The device...
this works reports on speed and high performance benchmarking of low band gap III-V based-HEMTs versus advanced n-MOSFET in low drain voltage regime (few kT/q). In this low bias condition, figure of merits such as, fT are higher and intrinsic gate delay and energy are almost one order of magnitude lower in the case of III-V based-devices (two orders of magnitude for the delay-energy product).
In this paper, a fully passivated true enhancement mode 110-nm metamorphic high-electron mobility transistor (E-MHEMT) on GaAs substrate with excellent dc and RF performance has been developed. By choosing an indium content of 40% for the AlInAs/GalnAs/AlInAs MHEMT, the difference between the Schottky-barrier height and the conductance band-offset (channel/barrier) of the device is enhanced compared...
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