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A novel approach for estimating variation in the TDDB failure time is reported. The results for structures with Dual Damascene copper-based metallization and a low-k dielectric material demonstrate that variation in the initial current at stress reasonably predicts variation in the TDDB failure time. Moreover, the method does not cause failure in the structures and is more efficient compared to other...
In this paper, a correlation between the I-V slope at low fields and TDDB voltage acceleration is demonstrated for the first time, based on a wide range of data from 32 nm to 130 nm node hardware. The data supports the radicE model, which is based on electron fluence (leakage current) driven, Cu catalyzed, low-k dielectric breakdown. Using this correlation, a fast wafer level screen method was also...
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