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Intensive research is currently being aimed at understanding both the growth and the physical properties of a wide range of two-dimensional (2D) materials [1], since this class of materials is expected to lead to entirely new types of devices on the nanoscale. Additionally, the introduction of magnetic dopants into a 2D lattice can bring out new functionalities, providing new opportunities for spintronic...
Conversion of solar energy into electricity is considered one of the most promising solutions to the energy problem. Conventional III-V solar cells are designed such that their optical depth for absorption relates directly to the thickness of the absorbing material. This results in relatively thick solar cell structures consuming valuable semiconductor material and increasing the solar cell manufacturing...
Enhanced photoluminescence emission from higher subbands of nanopore lattices compared to a quantum well is presented. Increasing pore diameter enhances the excited state emission implying reduced intersubband scattering rate, consistent with theoretical calculations.
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
A semiconductor laser with active layer consisting of a patterned quantum dot lattice demonstrates evidence of miniband formation resulting from inter-dot coupling. Excited state lasing is thought to result from a phonon bottleneck-like effect.
This study demonstrates the use of electronically coupled patterned quantum dots (QDs) fabricated using a wet-etching technique as the gain medium of a photonic device. This technique provides the unique ability to control both the spatial and spectral properties of QDs, while maintaining the high optical quality of the material necessary for photonics applications.
The prospect for the introduction of III-V semiconductors into the channel of n-type MOSFETs and thus replace Si with a high mobility material for 22 nm technology generation and beyond is examined in detail. The so-called implantfree (IF) III-V MOSFET architecture option is presented showing a fabricated n-type IF demonstrator suitable for scaling. We then focus on a prediction of the potential performance...
This paper summarises the current state of the art in GaAs MOSFETs, and argues that the 4 decade search for a device quality compound semiconductor oxide is over. Under suitable growth conditions, a GaO/GaGdO high-k (~20) gate dielectric has been shown to have a mid-gap density of states of 2.5 x 1011 cm-2 eV-1 [1], and vitally, an unpinned oxide-semiconductor interface [2]. With a scalable vertical...
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/ Ga2O3 MOS systems, presents GaAs MOSFET DC and RF data, and concludes with an outlook for high indium content channel MOSFETs. GaAs based MOSFETs are potentially...
The performance of 300 nm, 500 nm and 1 mum metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10 nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-kappa (kappa=20) dielectric stack grown upon a delta-doped AlGaAs/InGaAs/AlGaAs/GaAs heterostructure. Enhancement mode operation is maintained across the three reported gate lengths with a reduction in threshold voltage...
In this paper, we report MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-κ dielectric stack comprised of gallium oxide and gadolinium gallium oxide. Mobilities exceeding 12,000 and 6,000 cm2/Vs, for sheet carrier concentration ns of about 2.5x1012 cm-2 were measured on MOSFET structures on InP and GaAs substrates, respectively. These structures were designed...
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