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Using pure electric voltages instead of magnetic fields or large currents to manipulate magnetisms in multiferroic heterostructures is a goal for future low-power spintronics such as electric-writing magnetic-reading memories. Usually, the electric manipulation to magnetism shows a volatile effect which cannot be used for information storage,[1] because the magnetic variation vanishes after the electric...
Ferromagnetic semiconductor (Ga, Mn)As has emerged as the most thoroughly studied material for semiconductor spintronic applications, showing excellent magnetic properties that are usually described by the single-domain model [1]. However, certain uncertainties about magnetic phase structure and their dynamic properties of this system still remain unresolved. In this study, we systematically carry...
Atmospheric pressure dielectric barrier discharge(DBD) plasma surface treatment is a useful means to modify the properties of polytetrafluoroethylene(PTFE) films, such as hydrophily, adhensive ability. A generator with more dielectric layers will affect the plasma characteristics, and then affects the treatment effects on PTFE films. To investigate this influence, some experiments were carried out...
Systematic investigation of novel CMOS-compatible on-chip ferrite-integrated RF inductors is reported. New ferrite-fully-filled solenoid inductor is achieved, using low-temperature ferrite nano-powder-mixed-photoresist ink jetting/spin-coating technique we developed, which shows significant improvement of +160% in L and +220% in Q, to multi-GHz. An improved equivalent circuit for new ferrite-integrated...
Processes involving solid surfaces and liquid reactants are ubiquitous in the semiconductor industry, and photovoltaics is no exception. Examples include the chemical bath deposition of CdS buffer layers in Cu(In,Ga)Se2 and CuInS2 devices, a process that is used in virtually every commercially available CIS-based module. Aqueous etching is used for anti-reflective texturizing of silicon cells, and...
The stability of intrinsic and Al-doped single- and bilayer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1−xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85°C and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1−xMgxO ≫ ITO ≫ F:SnO2. The degradation...
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