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In SONOS 3D NAND, if the string select transistor (SST) and the ground select transistor (GST) use memory cell's trapping dielectric as their gate dielectrics, they could suffer abnormal Vt shift due to unwanted charge injection during programming/erasing (P/E). To solve this, we remove the blocking oxide and the trapping nitride, and use the BE-SONOS' ONO tunneling dielectric and an additional LPCVD...
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