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A compact ultra-wideband Wilkinson power combiner/divider is first demonstrated using a hermetic multi-wafer wafer level packaging technology. Its bandwidth is broadened to around 2-22 GHz with a maximum VSWR around 2:1, by using a multi-section design approach. A total of four sections are adopted to achieve better than 20 dB isolation between output ports across the majority of a 3-19 GHz band....
A wafer-level-packaging technology was used to integrate the 0.1 mum AlSb/InAs HEMT low-noise amplifiers with power amplifiers, switches and phase shifters to form a compact tri-stack transmit/receive module for light-weight and ultralow-power applications. The high manufacturability of AlSb/InAs HEMT receivers operating at 0.9 mW was demonstrated on a tri-stack wafer. This demonstration of manufacturable...
Wafer-level-packaging (WLP) AISb/InAs HEMT receivers have been developed for lightweight and ultralow-power applications. To warrant successful insertion of WLP AISb/InAs HEMT receivers for military and space applications, highreliability demonstration is essential. In this study, we performed three-temperature lifetesting to evaluate the reliability performance of WLP AlSb/InAs HEMT receivers. For...
The authors have successfully demonstrated self-aligned high-performance inversion-channel In0.53Ga0.47As MOSFETs using UHV-deposited nano-meter thick AI2O3/GGO dual-layer dielectrics and a TiN metal gate. Record-high drain current and transconductance, despite its challenging process, were achieved. Ring gate D-mode In0.2Ga0.8As MOSFETs using as a similar dual layer gate dielectric also exhibits...
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