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An InGaAs buried-heterostructure photodetector (BH-PD) was proposed and fabricated. By introducing etching and refilling with large bandgap and lower concentration semi-insulating InP, it was found that we can reduce the capacitance of P-I-N PDs by 33% without significantly increasing the reverse leakage current. It was also found that we can achieve a 3-dB bandwidth of 11.8 GHz from BH-PD, which...
Summary form only given. The advantages of using the complex coupled distributed feedback (DFB) laser structure are mainly its high single-mode yield and good selectivity, among others. The lasers described here were grown by MOCVD with a multiple quantum well (MQW) active region consisting of six compressively strained InGaAsP quantum wells. After MOCVD regrowth, both 2 /spl mu/m-wide self-aligned...
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