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Resistive switching devices and neuromorphic computing systems, while an attractive solution to minimize compute bottlenecks, suffer from sneak-path problem and area inefficient implementations respectively. This has prompted research in developing beyond-CMOS functional blocks that can serve as a compact single device circuit block (selector and oscillator respectively). In this work, we explore...
Oxide based resistive switching memories are considered to be one of the front-runners for the next generation non-volatile memories. Forming, the critical one time programming process, is not well understood. In this work, we try to understand the dynamics of forming process in two model systems — TaOx and TiOx, and compare the similarities and the universality in its control parameters. After comparing...
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