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In this paper, the reliable SiNx/AlGaN/GaN MISHEMTs on silicon substrate with improved trap-related characteristics have been well demonstrated. The devices with our proposed treatment method showed less deep-level traps and more Si surface donors at SiNx-AlGaN interface. The trap related device characteristics are also improved by using our optimized treatment method. The devices with proposed treatment...
CMOS-compatible GaN-on-silicon technology with excellent D-mode MISHFET performance is realized. A low specific contact resistance Rc (0.35 Ω-mm) is achieved by Au-free process. MIS-HFET with a gate-drain distance (LGD) of 15 μm exhibits a large breakdown voltage (BV) (980 V with grounded substrate) and a low specific on-resistance (R ON,sp) (1.45 mΩ-cm2). The importance of epitaxial quality in a...
Monolithic optoelectronic integrated circuits on CMOS chips are envisioned for realizing future high speed systems. Some of the key technologies that are required include electrically injected, low threshold and highly reliable lasers and the monolithic integration of lasers, waveguides and modulators on Si with Si-based electronic devices in a CMOS-compatible process.
Novel design concepts and cutting edge results are presented for high-power AlGaN/GaN Heterostructure Field-Effect Transistor switches for power converters, control and radio-frequency applications. For power switching, the HFET design has to be different from that of power amplifiers in order to minimize the contact resistance and avoid current crowding in the metal electrodes of large-periphery...
The performance of novel RF switching devices using insulating gate III-nitride metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) is demontrated. Initial results show that there is no degradation in the transmitted powers or gate leakage current during the 200+ hours stress with +30 dBm CW input powers. Multi-gate RF switching devices that increase the isolation in the...
In this context, we have investigated the growth kinetics and characteristics of metamorphic InAs QD lasers on GaAs, wherein special techniques of p-doping and tunnel injection are incorporated. As a result, we have realized high quality InAs QDs on GaAs that are comparable, in both photoluminescence (PL) intensity and linewidth (~30 meV), to state-of-the-art 1.1 and 1.3 μm InAs pseudomorphic QDs...
We map a laserpsilas internal temperature structure for the first time, identifying separate heat sources due to contact heating and nonradiative recombination and using this technique to compare degradation mechanisms for GaAs-based and Si-based lasers.
We have investigated the molecular beam epitaxial growth and characteristics of p-doped InAs tunnel injection quantum dash lasers on InP (001) substrates. Significantly improved photoluminescence intensity and narrow linewidth (~ 50 meV) are measured from multiple InAs quantum dash layers grown under optimized conditions. The lasers are characterized by very large T0 (204 K), large modulation bandwidth...
We describe novel AlGaN-GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with record high power-voltage efficiencies (PVE = RF power/Drain bias), up to 0.43W/V-mm at 2 GHz. The RF powers of 15 W/mm at 35 V (PVE=0.43 W/V-mm) and 20 W/mm at 55 V (PVE= 0.36W/V-mm) were measured, which are approximately 50% higher than the previously reported values of PVE=0.25 W/V-mm...
We review the performance and discuss the potential of GaN-based field effect transistors for high-power, high-temperature operation. Recent Monte Carlo simulations predict that GaN-based transistors operating at high voltages may outperform GaAs-based transistors even at room temperature. Our GaN/AlGaN doped channel HFETs (DC-HFETs) demonstrated highest frequency operation among all wide band gap...
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