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In recent years, spin-MOSFETs [1] have received much attention for low-power and high-performance integrated circuits. Figure 1 shows the schematic device structure of a spin-MOSFET that employs half-metallic ferromagnet tunnel contacts for the source and drain. To realize spin-MOSFETs, highly efficient spin-injector/detector for the Si channel is required. Half-metallic full-Heusler alloy Co2FeSi...
CuInS2 (CIS) films used in the absorber layer of solar cells are often prepared by the sulfurization of Cu-In metallic precursors. The CIS films usually show large surface roughness, which would decrease the open-circuit voltage of the solar cell because of a large np junction area and insufficient surface coverage of buffer layers. In this study, Cu-In-S precursors were deposited at the low temperature...
Metal mesh sensors that work at higher frequencies were developed and tested. The experimental results indicated that the sensitivity at 10 THz was 50 times that at 1 THz. The high sensitivity was attributed to the localized electromagnetic field and the optical thickness of the sample.
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