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High-performance self-aligned inversion-channel In 0.75 Ga 0.25 As n-MOSFETs using in situ ultra-high-vacuum (UHV) deposited Al 2 O 3 /Ga 2 O 3 (Gd 2 O 3 ) [GGO] and ex-situ atomic-layer-deposited (ALD) Al 2 O 3 as gate dielectrics have been fabricated. Both devices exhibit high drain currents and transconductances. A...
High-performance self-aligned inversion-channel In0.75Ga0.25As n-MOSFETs using in-situ ultra-high-vacuum (UHV) deposited Al2O3/Ga2O3(Gd2O3) and ex-situ atomic-layer-deposited (ALD) Al2O3 as gate dielectrics have been fabricated. Both devices exhibit excellent DC characteristics, including high drain currents and transconductances. A 1.2 mum-gate-length In0.75Ga0.25As MOSFET using Al2O3(2 nm-thick)/GGO(13...
In this work, for practical device integration in future, a self-aligned In0.53Ga0.47As MOSFET was successfully implemented, using molecular beam epitaxy (MBE) grown In0.53Ga0.47As as the channel, ALD-AI2O3 as the gate dielectric, and sputtered TiN as the gate metal. The key of the self-aligned process in fabricating inversion-channel III-V MOSFETs is not only to ensure good interface properly after...
The surface Fermi level unpinning in InGaAs has been realized with high kappa dielectric growth using molecular beam eitaxy (MBE) and atomic layer deposition (ALD). Furthermore, world-record device performances in self-aligned inversion-channel InGaAs MOSFET and a capacitance equivalent thickness (CET) of les 1 nm in Ga2O3(Gd2O3) and ALD-HfO2 on InGaAs have been achieved.
For the first time, inversion-channel GaN MOSFETs using atomic-layer-deposited (ALD) Al2O3 as a gate dielectric have been successfully fabricated, showing well-behaved drain I-V and transfer characteristics. The drain current was scaled with gate length, showing a maximum drain current of 10 mA/mm in a device of 1 mum gate length, at a gate voltage (Vgs) of 8 V and a drain voltage (Vds) of 10 V. High...
In this work, we developed a simple method for determining gate-bias dependent source and drain series resistances for advanced MOSFETs. Devices with gate lengths from 0.185 mum to 0.23 mum were measured and used to verify our theoretical derivation. Our result shows that the source/drain series resistance increases slightly then decreases moderately with gate bias. Simulation shows excellent agreement...
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