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Passive millimeter wave imaging systems above 100GHz have traditionally relied on mixer front-ends. InP HEMT low-noise amplifiers are reported for considerably higher frequencies, including a 70nm gate cascode amplifier with gain well into the 100GHz range, and two 35nm gate amplifiers operating at ~300GHz.
In this letter, 254-, 314-, and 346-GHz fundamental oscillators are demonstrated. These are the highest frequency oscillators using three-terminal devices reported to date. The performance is enabled through a 35-nm InP HEMT process with maximum frequency of oscillation (fmax) of 600GHz. These first-pass designs use coplanar waveguide (CPW) technology and include on-chip resonator and output matching...
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300-GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in...
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