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In the present work, we presented our findings on enhancing field emission of low temperature solution phase grown ZnO NWs by using diamond like carbon (DLC) thin film.
Studies on micro-fabrication processes on integrating amorphous Si nanowires (a-SiNWs) arrays into a triode device structures were performed. Self-aligned technique was employed. Uniform a-SiNW array and gated a-SiNW triode device structure were obtained. The work provides a possibility for fabricating crosslink addressable arrays of a-SiNW triode devices on low cost and large area glass substrates.
Silicon nanowires (SiNWs) array are expected to be a promising cathode in field emission devices. We report field emission (FE) characteristic on individual SiNW apex by using scanning tunneling microscopy (STM) operated in field emission mode at room temperature in ultrahigh vacuum condition. The result revealed the SiNWS has good emission characteristic. In addition, we verified the FN theory was...
A method was employed to improve the growth condition of carbon nanotube (CNT) in microwave plasma CVD system. Plasma etching on silicon substrates was avoided effectively. CNT bundles arrays were synthesized and the CNTs were vertical to the substrate
Au-Ag nanoparticles are used as nanomasks for Si nanowires fabrication. Au-Ag alloy film deposited on Si substrate is annealed in H 2 ambient at a temperature of 750degC. The SiNWs were fabricated through a dry etching processing in an inductively coupled plasma (ICP) system. SEM images of the uniform vertically aligned silicon nanowire arrays show 50 to 100 nm nanowire diameter range and ~1.1 mum...
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