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Au-Ag nanoparticles are used as nanomasks for Si nanowires fabrication. Au-Ag alloy film deposited on Si substrate is annealed in H 2 ambient at a temperature of 750degC. The SiNWs were fabricated through a dry etching processing in an inductively coupled plasma (ICP) system. SEM images of the uniform vertically aligned silicon nanowire arrays show 50 to 100 nm nanowire diameter range and ~1.1 mum height. Field emission characteristics were tested in an ultra-high vacuum system. The electron emission turn-on field (Eto ) and threshold field (Eth) were obtained from current-electric field characteristic plot