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In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical signal processing.
This paper presents an overview of recent work on the use of silicon waveguides for processing optical data signals. We will describe ultra-fast, ultra-broadband, polarisation-insensitive and phase-sensitive applications including processing of spectrally-efficient data formats and optical phase regeneration.
We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet.
We experimentally demonstrate self-phase modulation based all-optical regeneration of a 40 Gbit/s serial data signal in a silicon nanowire. Bit error rate characterization shows 2 dB receiver power improvement.
Dynamic phase and amplitude all-optical responses of silicon nanowires are characterized using a terahertz optical asymmetric demultiplexer (TOAD) based pump-probe scheme. Ultra-fast recovery is observed for moderate pump powers.
We have demonstrated 160 Gb/s all-optical data modulation with an extinction ratio of 18.5 dB based on XPM in a silicon nanowire. Error free performance is achieved for the optically modulated 160 Gb/s signal.
Silicon-on-Insulator nanowires provide an excellent platform for nonlinear optical functions in spite of the two-photon absorption at telecom wavelengths. Work on both crystalline and amorphous silicon nanowires is reviewed, in the wavelength range of 1.5 to 2.5 μm.
We describe recent demonstrations of exploiting highly nonlinear silicon waveguides for ultrafast optical signal processing. We describe wavelength conversion and serial-to-parallel conversion of 640 Gbit/s data signals and 1.28 Tbit/s demultiplexing and all-optical sampling.
We experimentally demonstrate broadband polarization-insensitive one-to-two wavelength conversion of a 10-Gb/s DPSK data signal based on non-degenerate four-wave mixing in a silicon nanowire with bit-error rate measurements.
We present an experimental set-up for measuring spectral and temporal nonlinear responses of silicon nanowires. We find that switching windows are independent of device lengths and there is no memory effect of the FWM response.
All-optical wavelength conversion of a 320 Gb/s line-rate RZ-OOK signal is demonstrated based on four-wave mixing in a 3.6 mm long silicon nanowire. Bit error rate measurements validate the performance within FEC limits.
We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals.
We report on all-optical wavelength conversion of 160, 320 and 640 Gbit/s line-rate data signals using four-wave mixing in a 3.6 mm long silicon waveguide. Bit error rate measurements validate the performance within FEC limits.
We present 10Gb/s silicon Mach-Zehnder modulators fabricated on a bulk silicon wafer. 10 Gb/s data transmission with extinction ratio of >;9 dB at de-emphasis level of 12 dB is successfully demonstrated.
All-optical wavelength conversion for a 320 Gb/s RZ-DPSK signal is demonstrated based on four wave mixing in a silicon nanowire. BER better than 10-9 is achieved for the wavelength converted RZ-DPSK signal.
We present a tunable wavelength conversion of sub-picosecond pulses based on four-wave mixing in a dispersion engineered silicon nanowire. A 100-nm tuning range of the converted wavelength is demonstrated with an almost constant conversion efficiency.
We present WDM multicasting based on non-degenerate four-wave mixing in a silicon nanowire. A one-to-six phase-preserving wavelength multicasting of 10 Gb/s differential phase-shift-keying data is experimentally demonstrated with bit-error rate measurements.
We propose using a hydrogenated amorphous silicon waveguide for ultra-high-speed serial data waveform sampling. 320 Gbit/s serial optical data sampling is experimentally demonstrated with +12 dB intrinsic four wave mixing conversion efficiency.
We demonstrate conversion from 64×10 Gbit/s OTDM to 25 GHz DWDM by time-domain optical Fourier transformation. Using a single silicon nanowire, 40 of 64 OTDM tributaries are simultaneously converted to DWDM channels within FEC limits.
In this paper, thermally stable Ni-germanosilicide technology utilizing Ni-Pd alloy and Co/TiN capping layer (Ni-Pd/Co/TiN tri-layer) is proposed for high performance strained-Si CMOS technology. The proposed Ni-germanosilicide technology exhibits low temperature silicidation with a wide temperature window for rapid thermal process (RTP). Moreover, sheet resistance shows stable characteristics in...
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