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We present the electrical characteristics of the first 90nm SiGe BiCMOS technology developed for production in IBM's large volume 200mm fabrication line. The technology features 300 GHz fT and 360 GHz fMAX high performance SiGe HBTs, 135 GHz fT and 2.5V BVCEO medium breakdown SiGe HBTs, 90nm Low Power RF CMOS, and a full suite of passive devices. A design kit supports custom and analog designs and...
Abstract-We report an InPZIn0.53Ga0.47As/InP double heterojunction bipolar transistor (DHBT) demonstrating simultaneous 430-GHz fτ and 800-GHz fmax. The devices were fabricated using a triple mesa process with dry-etched refractory metals for emitter contact formation. The devices incorporate a 30-nm-thick InP emitter semiconductor which enables a wet-etch emitter process demonstrating 270-nm-wide...
Slow-wave coplanar waveguides (SW-CPW) are promising candidates for realization of low-loss and compact on-chip passive components at millimeter-wave (MMW) frequencies. To meet the stringent pattern density requirement of nanoscale CMOS, two types of dummy prefills are proposed. The transmission lines achieve a measured effective dielectric permittivity of 20 and 10, an attenuation of 1 and 0.5 dB/mm,...
We report the effects of UV-ozone oxidation, oxide removal etch chemistry (dilute HCl or concentrated NH4OH), semiconductor doping, and annealing on the contact resistivity (rhoc) of Ti0.1W0.9 refractory alloy to n-type InGaAs. The semiconductor surface was oxidized through exposure to UV-ozone, then subsequently etched by either dilute HCl or concentrated NH4OH before TiW contacts were deposited...
Type I InP/InGaAs/InP double heterojunction bipolar transistors were fabricated using a simple mesa structure, where emitter junction widths have been scaled from 250 nm to 200 nm. These devices exhibit fmax in excess of 800 GHz, and ftau = 360 GHz. Greater than fifty percent device yield was obtained by employing two 25 nm SiNx sidewalls to protect and anchor the refractory metal emitter contact...
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