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Bow-tie antenna coupled field-effect transistors have been implemented in 0.25 μm AlGaN/GaN process technology and have been mounted on an aplanatic hemispherical silicon substrate lens. By asymmetric coupling of 590-GHz radiation to the channel, the transistors are used as direct power detectors, achieving system noise-equivalent power values of 166 pW/√Hz at 590 GHz (referred to the total beam power)...
We report on terahertz detection experiments at 240 GHz using carbon-nanotube field-effect transistors with a single semiconducting single-walled tube as the transistor's channel. From DC channel resistance measurements, the voltage response is predicted theoretically from the dc transconductance of the devices. Rectification is shown for an electronically applied 2-MHz signal and for free-space illumination...
We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.
This paper presents the design and test results of a computational radiation sensor system based on a single chip solution that can perform standalone gamma isotope identification. A low power sensor front end with a charge sensitive amplifier, an event driven analog-to-digital converter, and a dedicated microcontroller are integrated on the same chip to process and bin the isotope data from a NaI...
This paper presents the design and testing results of a computational radiation sensor. The design utilizes a dedicated microcontroller to perform computation and data aggregation on the sensor head to reduce the information bit rate. A low-power charge sensitive amplifier and ADC complete the design. The design was implemented in a 0.35 mum CMOS technology with field tests demonstrating the validity...
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