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Bow-tie antenna coupled field-effect transistors have been implemented in 0.25 μm AlGaN/GaN process technology and have been mounted on an aplanatic hemispherical silicon substrate lens. By asymmetric coupling of 590-GHz radiation to the channel, the transistors are used as direct power detectors, achieving system noise-equivalent power values of 166 pW/√Hz at 590 GHz (referred to the total beam power)...
We present a terahertz camera working at 590 GHz at real-time frame-rates of 16 frames per second (fps). An array of 12×12 field-effect transistors has been fabricated in a 150-nm CMOS process and is used as the camera's image sensor. The averaged single-pixel noise-equivalent-power is 43 pW/√Hz, the voltage single-pixel responsivity is 340 V/W. For an effective power of 104 µW distributed over the...
We report on an order-of-magnitude enhancement of sensitivity of CMOS-transistor-based THz detectors. At 2.54 THz, 3.13 THz and 4.25 THz, responsivity values of 336 V/W, 308 V/W, and 230 V/W and optimum noise-equivalent-power values of 63 pW/√Hz, 85 pW/√Hz, and 110 pW/√Hz are obtained.
We discuss two different implementations of field-effect-transistor based detectors (TeraFETs) optimised for imaging above 1 terahertz (THz). (i) Resonant-antenna-coupled MOSFET rectifiers have been fabricated using CMOS technology and (ii) broad-band devices by exploting GaN/AlGaN high-electron-mobilitiy transistors. Both technologies are scalable to large detector arrays and allow realisation of...
We study scaling behaviour of terahertz responsivity and low-frequency noise of silicon MOSFET-based detectors. A set of 550-GHz resonant patch-antenna-coupled transistors with different channel widths varying from 320 nm to 1920 nm have been fabricated and investigated in temperature range from 77 K to 360 K. We find that the best sensitivities are achieved for narrowest devices without applied bias...
We present an all-electronic raster-scan imaging system for 220 GHz which is fully based on planar CMOS integrated circuit components. The emitter has been implemented in 90-nm CMOS process and delivers up to 50 µW at 220 GHz. The detector, based on a patch-antenna-coupled field-effect transistor pair has been implemented in a 150-nm CMOS process and exhibits a maximum responsivity of 180 V/W at 213...
We present experimental and theoretical results on sub-harmonic mixing of THz radiation at 639 GHz with radiation at 213 GHz (both being high above fT) in an antenna-coupled silicon CMOS detector with a fundamental antenna resonance at 213 GHz. The measurements are analyzed in the context of distributed resistive mixing in the channels of the field-effect transistors.
We explore the applicability of CMOS field-effect transistors for coherent terahertz imaging. In particular, we discuss two configurations: a point-to-point and a plane-to-plane imaging system. With the latter, a 100×100-pixel camera with an active area of 20×20 mm2 has been physically simulated by raster-scanning groups of a few detectors across the image plane. Using detectors with a noise-equivalent...
Distributed phenomena permit the use of field-effect transistors for the detection of frequencies far beyond transistor cut-off. This contribution gives details on an improved design for patch antenna-coupled field-effect-transistors and shows sensitive detection from 0.2 to 4.3 THz for monolithically integrated devices relying on commercial 0.15-μm CMOS process technology. Room-temperature responsivity...
We report on the performance of silicon CMOS-transistor-based plasmonic THz detectors up to 4.25 THz. Room-temperature responsivity values of 1011 V/W at 584 GHz, 90 V/W at 3.125 THz and 11 V/W at 4.25 THz are reported. When cooled down to 20 K a maximum responsivity of 3.47 kV/W and a noise-equivalent power of 3 pW/√Hz are reached.
We report on the study of the enhancement of responsivity and properties of low-frequency noise in silicon 0.25 µm CMOS transistor-based detectors for terahertz radiation under applied dc source-to-drain current. We find that at signal modulation frequencies above 50 kHz the signal-to-noise ratio becomes independent from applied current, whereas the responsivity of detectors can be enhanced up to...
Antenna-coupled field-effect transistors were integrated as multi-pixel (5×10) detector arrays for electromagnetic radiation between 550 and 600×GHz using commercial 0.15××m CMOS process technology. Reported is a minimum optical noise-equivalent-power (NEP) of 43 pW/ √Hz and a maximum (capacitive-loading-limited) optical responsivity of 970 V / W (both values averaged). An electrical NEP of 9 pW /...
We report on a responsivity enhancement of silicon CMOS transistor-based detectors for terahertz radiation by the application of a source-to-drain bias current.
We report on heterodyne detection of 0.65-THz radiation with silicon CMOS transistors. With a fairly low local-oscillator power of -27 dBm delivered to the detector, we measure a noise power of -111 dBm/Hz. The 3-dB sensitivity roll-off of the intermediate frequency (IF) is as high as 750 kHz. The detectors exhibit an almost frequency-independent signal-to-noise ratio of 45 dB over the whole measured...
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