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A novel type of high-sensitivity Surface Plasmon Resonance (SPR)-based refractive index sensor is demonstrated, with a Kretschmann prism-coupling setup enclosed in an optical cavity and interrogated by a telecom wavelength laser source. Two thin layers of Au and SiO2 are deposited on the prism (SPR chip). Analogously to the sensors commonly referred as “Intensity modulated SPR sensors”, in the presented...
In this paper, a new approach for the near infrared sub-bandgap detection in Si-based devices is investigated. In particular, the design, the realization and the characterization of a back illuminated silicon resonant cavity enhanced Schottky photodetectors, working at 1.55 μm, are reported. The photodetectors are constituted by Fabry-Perot microcavity incorporating a Schottky diode. The working principle...
In this paper the realization and the characterization of a new kind of resonant cavity enhanced photodetector (RCE), fully compatible with silicon microelectronic technologies and working at 1.55 mum, are reported.
A silicon 50-??m-long Fabry-Perot waveguide modulator, based on the thermo-optic effect and electrically driven, has been entirely fabricated using microelectronic techmiques. The device is thought for direct integration with electronic circuits because the planar optical cavity has been defined by plasma etching and not by cleaveage of the chip. Operation at frequencies up to about 2 MHz has been...
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