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High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress...
Ferromagnetic L10-ordered τ-phase MnAl thin films have been shown to exhibit high perpendicular magnetic anisotropy (Ku > 107 ergs/cm3), moderate saturation magnetization (M < 600 emu/cm3), and low Gilbert damping parameter (α = 0.006) [1]. x-MnAl is also rare earth- and precious metal-free, making it an attractive candidate for a variety of applications such as magnetic recording, nonvolatile...
As FETs are scaled, the dielectric and semiconductor channel thicknesses must be reduced to suppress short-channel effects. Even using fin field effect transistors (finFETs) and gate all around FETs (GAAFETs), [1],[2], whose electrostatic performance is excellent, at 4nm gate length the channel should be less than 2nm thick. To obtain high drive current per unit IC die area, the fin height should...
In this work, for the first time, we propose and demonstrate an implant-free gate-all-around (GAA) low-temperature poly-Si (LTPS) nanowire (NW) device with Al2O3 dielectric and TiN gate. Since the channel and source/drain (S/D) regions are sharing one in-situ phosphorous-doped poly-Si material, the process cost could be efficiently reduced. Such novel scheme appears to be promising for both system-on-panel...
We have investigated the precursor effect of La2O3 cap layers on Vfb tuning and EOT reduction in SiO2/HfO2/TiN gate stacks. The Vfb tuning and EOT reduction correlate with the intermixing of La2O3 and HfO2 dielectrics which forms dipoles at the lower interface between HfO2 and SiO2 IL and the diffusion of La and Hf atoms to the SiO2 IL. The use of La(fAMD)3 precursor for the La2O3 cap layer deposition...
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