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A commercial Bayard-Alpert ionization vacuum gauge was equipped with a field emission electron source based on a cathode consisting of an array of 16 gated, p-doped, and DLC-coated Si-tips and characterized. An anode current of about 1.3 μA led to an ion current of 7 fA at 3×10−7 mbar and 0.8 pA at 4×10−5 mbar. Whereas at pressures higher than 4×10−5 mbar the emission current of the electron source...
While crystalline silicon FET's are the key enablers for the integrated circuit field, amorphous silicon thin film transistors are the key semiconductor of the large-area electronics field, also known as “macroelectronics.” This talk reviews the basic properties of amorphous silicon, and then outlines research trends, driven in large part by new applications. These trends include increased performance,...
This study designs and fabricates a suspending antenna on silicon substrate with backside electromagnetic band-gap (EBG) structures using surface and bulk micromachining techniques. The proposed Si-based antenna with dimension 7 mm × 18 mm × 0.5 mm only and is constructed of a ground copper plane, supporting copper vias, a suspending F-shape copper conducting layer and backside silicon cavities (to...
This paper reports a novel silicon microcantilever sensor with an embedded n-type metal-oxide semiconductor field-effect transistor (nMOSFET) for the detection of relative humidity (RH) based on the surface stress sensing principle. The nMOSFET has a channel along <100> crystal orientation of (100) silicon, which is parallel to the microcantilever. The RH detection is realized by coating a thin...
Using the First-principle calculation software, the adsorptions of CdTe layers and ZnTe layers on the clean and As-passivated Si(211) substrates are simulated respectively. Based on the computational results, we theoretically interpret the important effects of the As4 passivation during the epitaxial growth: arsenic can saturate part of the dangling bonds and weaken the surface states to make the...
Ultraviolet microdisks lasers are fabricated on silicon substrates, with a thin layer of zinc oxide grown on top of silica disk. Under optical pumping, lasing occurs in the whispering gallery modes at room temperature.
Charging damage induced in oxides with thickness ranging from 8.7 to 2.5 nm is investigated. Results of charge-to-breakdown (Q/sub bd/) measurements performed on control devices indicate that the polarity dependence increases with decreasing oxide thickness at room temperature and elevated temperature (180/spl deg/C) conditions. As the oxide thickness is thinned below 3 nm, the Q/sub bd/ becomes very...
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