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The surface treatment of low-k dielectric layers by exposure to atomic oxygen is presented as an alternative to plasma based treatments prior to barrier layer formation. High carbon content porous low-k dielectric films were subjected to increasing exposures of atomic oxygen and x-ray photoelectron spectroscopy (XPS) studies reveal both the depletion of carbon and the addition of oxygen at the surface...
In this x-ray photoelectron spectroscopy (XPS) study ultra-thin Si and MnO films were deposited on a range of low dielectric constant carbon doped oxides (CDO) with varying carbon content, in order to accurately determine the binding energy (BE) positions of the Si 2p and O 1s core level peaks as a function of carbon concentration. The results show a measurable correlation between carbon content and...
In this study Mn silicate (MnSiO3) barrier layers were formed on ultra low dielectric constant (ULK) carbon doped oxide (CDO) surfaces, using both metallic Mn and oxidized Mn films. Using x-ray photoelectron spectroscopy (XPS) it has been shown that deposition of metallic Mn and partially oxidised Mn (MnOx where x < 1) films on CDO surfaces results in the formation of both MnSiO3 and a Mn...
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