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In this paper, we examine the time-dependent dielectric breakdown (TDDB) reliability of p-type field-effect transistor devices with 0.7-nm-equivalent-oxide-thickness HfO2 gate dielectric layers. The TDDB distributions indicate ten-year lifetime with operating voltages in excess of 1 V. The reason for this high reliability lies in the high Weibull slopes (~1.2) of the measured TDDB distributions. In...
In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å̊. The layers show maximum operating voltages in excess of 1 V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current...
In this paper, the electrical and structural analysis of HfO2 thin films formed by ion assisted deposition are reported. The electrical results show excellent layer uniformity and very good reproducibility before post deposition annealing. The influence of the oxygen flow during the growth upon the electrical properties of the film has also been investigated. Forming gas annealing removed the hysteresis...
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