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Contact resistivity is a key contributor to the parasitic series resistance of nanoscale MOSFETs. Since the contact resistivity is an exponential function of the Schottky barrier height, new contact materials that can provide smaller barrier heights to source-drain junctions are needed. Platinum germanosilicide (PtSi1-xGex) is of interest as a contact material to the recessed Si1-xGex junctions of...
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