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The accurate evaluation of electrical parameters like effective channel length and series resistance for 10 to 22nm FinFETs is very complex, although extremely important for the correct device modelling. Our paper reviews and applies to measured FinFETs various DC methods for the extraction of effective channel length and source/drain resistance. Experimental devices with fin thickness from 10nm to...
The implementation of the BSIM-CMG parameter extraction procedure is presented and discussed, based on measurements. FinFETs with mask channel length from 45nm to 10µm were measured and their DC I–V data used for the extraction. We show an improved fitting of a wide range of channel lengths using a single set of model parameters. Measured devices with fin thickness of 10nm, 15nm and 20nm are studied...
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