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In this paper, we study thermal disturbance and its impact on reliability using a novel measurement structure - the micro-thermal stage (MTS). The small thermal time constant of the MTS extends the time-scale of temperature dependence measurement to ~100 μs. The reliability of phase-change memory (PCM) is evaluated in terms of data retention and variation of the high resistance (RESET) state resistance...
Ge2Sb2Te5 (GST)-based phase change memory (PCM) is a digital memory technology set to replace flash because of its greater scalability, lower programming power requirements, faster read-write times, and enhanced durability. Modeling efforts have focused on characterizing the coupled electrical, thermal, and phase-transition processes that define PCM switching events. Understanding the effects of device...
The increasing need for more effective cooling in electronic devices has led to research into the use and modeling of two-phase cooling strategies in micro-scale geometries. In order to verify these models it is necessary to reliably determine local parameters such as fluid temperature in boiling flows, which cannot be easily obtained due to micro-scale geometries. A convenient and non-contact method...
Among the many emerging non-volatile memory technologies, chalcogenide (i.e. GeSbTe/GST) based phase change random access memory (PRAM) has shown particular promise. While accurate simulations are required for reducing programming current and enabling higher integration density, many challenges remain for improved simulation of PRAM cell operation including nanoscale thermal conduction and phase change...
This work represents the first electro-thermal study of metallic single-wall carbon nanotubes (SWNTs) for interconnect applications. Experimental data and careful modeling reveal that self-heating is of significance in short (1 < L < 10 mum) nanotubes under high-bias. The low-bias resistance of micron scale SWNTs is also found to be affected by optical phonon absorption (a scattering mechanism...
Thermal phenomena are having an increasing influence on drive and leakage currents in modern transistors. This trend is accelerated for confined-geometry devices, which include thermally-resistive interfaces and materials with low thermal conductivity (e.g. SiO2, Si 1-xGex). This paper summarizes the nanotransistor thermal design challenges and reviews the latest advancements in electro-thermal modeling
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