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A 122 GHz subharmonic receiver for imaging and sensing applications has been realized, which consists of a single-ended LNA, a push-push VCO with 1/32 divider, a polyphase filter, and a subharmonic mixer. It is fabricated in SiGe:C BiCMOS technology with fT/fmax of 255 GHz/315 GHz. The down-conversion gain of the receiver is 25 dB at 127 GHz, and the corresponding noise figure is 11 dB. The 3-dB bandwidth...
The paper presents two types of 122 GHz low-noise-amplifiers (LNA) fabricated in SiGe BiCMOS technology. The amplifier design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifiers are designed for high gain, minimum...
A wideband amplifier up to 50 GHz has been implemented in a 0.25 mum, 200 GHz ft SiGe BiCMOS technology. Die size was 0.7 times 0.73 mm2. The two-stage design achieves more than 11 dB gain over the whole 20 to 50 GHz band. Gain maximum was 14.2 dB at 47.5 GHz. Noise Figure was lower than 9 dB up to 34 GHz and a current of 30 mA was drawn from a 4 V supply. To the author's best knowledge this is the...
A low-power, X-band low-noise amplifier (LNA) is presented. Implemented with 180 GHz silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs), the circuit occupies 780times660 mum2. The LNA exhibits a gain of 11.0 dB at 9.5 GHz, a mean noise figure of 2.78 dB across X-band, and an input third-order intercept point of -9.1 dBm near 9.5 GHz, while dissipating only 2.5 mW. The low-power performance...
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