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As we known, the measurement of junction-to-case thermal resistance (Rth-JC) of semiconductor power devices is very important. In this paper, an approach of transient dual interface method (TDIM) with gate-source voltage (Vgs) as the temperature sensitive electrical parameters (TSEP) was investigated for the measurement of Rth-JC of packaged SiC MOSFET. The measured Rth-JC value of packaged SiC MOSFET...
With transistors approaching scaling limits, demonstrating a record device demands ∼20–40 process steps, many at extreme resolution. Facing this, how might a Ph.D. student steer the future of VLSI or of wireless systems? Beyond exploring yet more new channel materials, whether 2D or 3D, we explore below other options.
We report MOSFETs with 25-nm gate length (Lg), extremely thin 2.5 nm InAs channels and 0.7/3.0 nm (physical) Al2OxNy/ZrO2 gate dielectrics, and 12 nm In0.53Ga0.47As vertical spacers in the raised epitaxial source/drain. The FETs establish key new DC performance records, at VLSI-relevant gate lengths (25 nm), including 0.50 mA/µm on-current (at 100 nA/µm Ioff and 0.5 V VDD) and 77 mV/dec. subthreshold...
Given low interface trap densities and low access resistances, InGaAs MOSFETs can provide greater on-state current than silicon MOSFETs at the same effective oxide thickness (EOT), and are thus strong candidates for use in VLSI.1 Transconductance as high as 2.1 mS/μm (Vds=0.5 V) with 115 mV/decade (Vds=0.5 V) subthreshold swing has been reported2 in planar III-V MOSFETs using a gate recess etch through...
This paper reports a parylene-coated nMOSFET (n-type metal-oxide-semiconductor field-effect transistor)-embedded cantilever, which is suitable for the detection of chemical or biological molecules in liquid phase based on the surface stress sensing principle. The silicon cantilevers are configured along <;110> direction, and the channels of the embedded-nMOSFETs are perpendicular to the cantilevers...
This paper reports a novel silicon microcantilever sensor with an embedded n-type metal-oxide semiconductor field-effect transistor (nMOSFET) for the detection of relative humidity (RH) based on the surface stress sensing principle. The nMOSFET has a channel along <100> crystal orientation of (100) silicon, which is parallel to the microcantilever. The RH detection is realized by coating a thin...
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