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A simple and unified fundamental theory on the mechanism of stress memorization technique (SMT) is presented for the first time. This theory is based on the difference in thermal properties of the materials involved in SMT process, i.e., silicon (channel), polysilicon (gate), amorphous silicon (source/drain), SiO2 (gate oxide), as well as Si3N4 (SMT nitride stressor layer), which lead to deformations...
In a standard process with a conventional rapid thermal annealing (RTA) stress engineering is a standard feature for advanced CMOS technologies to improve device performance (M. Horstmann et al., 2005). Unfortunately, such an annealing scheme does not meet the 32 nm node requirements due to thermal diffusion and solid solubility limitations. To solve the problem, technologies like flash lamp annealing...
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