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Hot-carrier induced degradation and post-stress recovery of 240/300 fT/fMAX SiGe HBTs are investigated. The investigation includes the impact of stress conditions and lateral scaling. Self-heating is employed as a means to investigate thermal-induced recovery activation and rate.
Variants of P in situ spike doped poly-Si emitters are compared with an As implanted poly-Si emitter for use in HBTs. The main goal is the optimization of the thermal process after emitter doping. The base B diffusion is shown to be stronger influenced by the emitter dopant outdiffusion for P than for As. This effect is investigated by means of an improved B SIMS profiling, and by CV measurements...
Experimental and numerical results on the leverage of a modified vertical collector profile on dc characteristics as well as on high-frequency performance of a SiGe-HBT are presented. It is shown that an increased collector doping near the base junction allows to improve essentially the saturation behavior in high-current mode compared to a flat low doped collector region. The additional doping peak...
The Vertically Integrated Gain (VIG) cell is a new DRAM structure for 64/256 Mbit ORAMs. By using a trench structure and 0.25 μm design rules a cell size of 0.55μm2 is attainable. The cell function bases on merging 2 bipolar junction transistors (BJT), 1 junction field effect transistor (JFET) and 2 capacitors. 20 transient device simulation is used to investigate the electrical behaviour of the VIG...
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