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Manufacturers of power semiconductors and modules intend to rate the maximum junction temperature up to 200°C. This results in higher temperatures at other components of the inverter system as well. In this paper, it is presented a method to identify thermal constraints in an inverter design by combining analytical and numerical analysis of the thermal spreading. Furthermore, an overview of the thermal...
This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is...
Gate units of todaypsilas converters are in most cases voltage sources charging the input capacitance with a fixed gate resistor. Consequently, there is hardly no possibility to adapt quickly the gate unit to different semiconductor devices. During operation, there is no adaption process to adjust the switching transients to their actual optimum. The possibilities to implement new features or to adapt...
This paper presents a first order ΣΔ Analog to Digital Converter for current measurement in motor controls. The converter consists of a time continuous differential integrator at the input with external capacitors and a four bit pulsewidth modulator in the feedback branch. Highly symmetrically switching inverters are used to couple the differential feedback signal back to the input of the converter...
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