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In this paper, we present a new method of sheet resistance measurement on AlGaN/GaN wafers. Such measurements are useful for an easy monitoring of AlGaN/GaN epitaxy. Measurements were obtained by adapting the four-point probe technique to AlGaN/GaN wafers. This method is used today in the 200mm GaN-on-Si fabrication line at the CEA-LETI with a standard deviation of 2% on the sheet resistance measurement.
Wide bandgap semiconductors such as GaN have a strong interest for new high voltage applications. For this reason, the scientific community has started to develop high power GaN transistors with a Breakdown Voltage (BV) up to 1800V [1].
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