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Problem areas in materials for future ULSIs are identified and possible solutions are discussed. Many new materials have already been used in addition to the usual silicon, its oxide and aluminum to make state-of-the-art LSIs which contain up to forty million transistors and feature line-widths around 0.8 mu m. Why the materials have to be reviewed to further exploit the ultimate potential of integrated...
A 1.3-μm CMOS high-speed digital datastrobe processor (DDP) is described. This device uses a high-speed (15 MS/s) 7-bit half-flash analog-to-digital converter, a digital wave equalizer, and a digital phase-locked loop. The DDP has 27 K transistors in a 4.75×4.90 mm 2 chip size and consumes 100 mW
A band-to-band tunneling MOS device (B/sup 2/T-MOSFET), which consists of both n/sup +/ source (drain) and p/sup +/ drain (source) is proposed and characterized experimentally in detail. The band-to-band tunneling effect, which puts a new scaling constraint on submicron MOS device design, is used as the mechanism for the operation of this device. Such a diffusion-layer-tunneling device provides no...
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