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A 0.13 mum SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (fT=240 GHz, fmax=330 GHz, BVCEO=1.7 V) along with high-voltage HBTs (fT=50 GHz, fmax=130 GHz, BVCEO=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above...
The paper presents two types of 122 GHz low-noise-amplifiers (LNA) fabricated in SiGe BiCMOS technology. The amplifier design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifiers are designed for high gain, minimum...
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