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This paper reviews a 0.13 µm BiCMOS technology with high-speed SiGe HBTs featuring maximum oscillation frequencies fmax of 500 GHz, transit frequencies fT of 300 GHz, and CML ring oscillator gate delays of 2.0 ps. The HBTs exhibit breakdown voltages BVCEO of 1.6 V and BVCBO of 5.1 V. The improvement of RF performance compared to the preceding HBT generation is attributed to scaled lateral device dimensions,...
This paper addresses the integration of a new generation of high-speed SiGe HBTs with fT/ fmax of 300/500 GHz and minimum CML ring oscillator gate delays of 2.0 ps in a 0.13 μm BiCMOS technology. Technological measures for improving the speed of the HBTs compared to our first 0.13 μm BiCMOS generation are discussed. These include scaling of lateral device dimensions and doping profiles as well as...
A 0.13 mum SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (fT=240 GHz, fmax=330 GHz, BVCEO=1.7 V) along with high-voltage HBTs (fT=50 GHz, fmax=130 GHz, BVCEO=3.7 V) integrated in a dual-gate, triple-well RF-CMOS process. Ring oscillator gate delays of 2.9 ps, low-noise amplifiers for 122 GHz, and LC oscillators for frequencies above...
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