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The limitation of the package height in the smartphone becomes severer and severer. Especially in the case of application processer, TSV structure is necessary to clear 1mm package height that is stacked by 2–4 DRAMs inside. But not only the cost of fabricating Through Si Via (TSV) on the Si device is expensive, also handling of the thin chip is fragile. To solve these problems, we have developed...
Due to increase of integration density on a chip, layout variations have a serious impact on MOSFET behavior, such as active-area-size dependence (the STI-stress effect), well-boundary location dependence (the well-proximity effect) and other proximity effects. A circuit MOSFET model (An extracted SPICE-parameter set) tends to have complex expressions. Circuit designers, however, require a sufficiently...
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