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In this paper, a novel field effect nanowire MOS transistor taking advantage of both dual-material gate and surrounding gate is proposed and performance characteristics are demonstrated numerically in detail. Surrounding-gate transistor is known to be used to enhance the electrostatic control of the channel, and dual-material-gate structure is extended from split-gate field effect transistor to obtain...
A generic DG MOSFET analytic model with vertical electric field induced mobility degradation effects is proposed and verified in this paper. It is shown that the proposed model is valid for different operation modes including symmetric DG (sDG), asymmetric DG (aDG) and independent DG (iDG). Extensive two-dimensional (2-D) device simulation is performed to verify the proposed model.
ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson's equation to solve the potential along the vertical direction of the silicon film. The...
This paper describes a web-based platform for nanoscale non-classical device modeling and circuit simulation, especially for non-classical CMOS device compact modeling and circuit performance prediction. This platform is based on program libraries, including model code files. We use SPICE as circuit simulation framework, and the Verilog-A as model design language. Based on the user input deck content,...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in detail in this paper by a numerical simulation program developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET and a universal MOSFET charge density equation which makes this program suitable in a wide range of operation...
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