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The authors demonstrate a low-cost, high-performance, high-voltage complementary SiGe:C BiCMOS process. This technology offers three npn SiGe:C devices with fT/BVCEO values of 40GHz/5V, 63GHz/3.5V, and 120GHz/2.1V together with a 32GHz fT/35GHz f max/ 4.4V pnp SiGe:C HBT by adding only three bipolar masks to the underlying RF-CMOS process. With two additional implant masks, a 150GHz, 2.2V npn HBT...
An integrated PLL aimed at wireless transceivers in the unlicensed band from 59GHz to 64GHz is described. The PLL was fabricated in a SiGe:C BiCMOS technology with both f/sub T//f/sub max/=200GHz. The measured PLL lock range is from 53.3GHz to 55.7GHz. It operates from a 3V supply except for a first divide-by-two stage which requires a 5V supply. Total power consumption is 895mW.
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