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This paper investigates a solar-driven humidification dehumidification (HDH) desalination system in summertime with a higher. The mathematical model of the HDH desalination system are established, and the corresponding performance, mainly containing the freshwater production, gained output ratio (GOR)as well as the collecting efficiency of the flat plate solar heat collector is simulated and analyzed...
With the scaling down of the MOSFET, nanoscale BioFET will be given particular attention to in the future. Different factors impacting the performance of nanoscale BioFET are presented in this paper. A numerical program is developed and different factors influencing the performance of BioFET are discussed. It is shown that parameters in field-effect-transistor and electrolyte, including doping concentrations,...
Electron mobility in nanoscale double-gate (DG) MOSFETs with symmetric, asymmetric and independent operation modes is studied in this paper by using a comprehensive numerical model. A numerical program is first developed and then the dependence of electron mobility on device geometry and bias conditions are simulated. It is shown that that electron mobility changes monotonically with effective field...
A unified drain current model for undoped or lightly doped double-gate (DG) and surrounding-gate (SRG) MOSFETs incorporating velocity saturation effect are presented in this paper. The unified charge-based core model for undoped or lightly doped DG and SRG MOSFETs is presented first. Caughey-Thomas engineering mobility model with exponent factor n=2 is then integrated self-consistently into the unified...
ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson's equation to solve the potential along the vertical direction of the silicon film. The...
As one of the candidates of the next generation non-volatile memory(NVM), phase change memory(PCM) has been paid more attention. However, there are still many open issues such as numerical simulation to study. Phase transition is a temperature based process, which can be simulated by temperature profile generated by the device simulator coupled with the phase transition model. In this work, a phase...
In this paper an analytic channel potential-based model is proposed to predict the dynamic depletion behavior of surrounding-gate (SRG) MOSFETs with arbitrary doping level. The key input voltage equation is derived out by solving Poisson's equation approximately with arbitrary doping in the cylindrical coordinate. Combined with the surface-centric potential relationship, the electrostatic potential...
The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in detail in this paper by a numerical simulation program developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET and a universal MOSFET charge density equation which makes this program suitable in a wide range of operation...
The objective of this paper is to compare the performance of the proposed measurement assisted partial resampling (MAPR) particle filter against the performance of the extended Kalman filter (EKF) within the context of a dynamic 6 DoF hydrodynamic system. In order to compare the respective performances of the above two filters in resolving a navigation solution, the filters are given a trajectory...
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