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ULTRA-SOI is a new generation of the channel-potential-based non-charge-sheet model for the dynamic depletion (DD) Silicon-On-Insulator (SOI) MOSFET, developed by TSRC group in EECS department of Peking University with many year efforts. The model is formulated with a fully physical derivation from the Poisson's equation to solve the potential along the vertical direction of the silicon film. The...
In this paper an analytic channel potential-based model is proposed to predict the dynamic depletion behavior of surrounding-gate (SRG) MOSFETs with arbitrary doping level. The key input voltage equation is derived out by solving Poisson's equation approximately with arbitrary doping in the cylindrical coordinate. Combined with the surface-centric potential relationship, the electrostatic potential...
This paper presents a charge-based compact model for the arbitrary doped long-channel cylindrical surrounding-gate (SRG) MOSFETs. Starting from Poissonpsilas equation with fixed charge and inversion charge terms, an accurate equation of inversion charge is obtained with the full-depletion approximation. Substituting this inversion charge expression into Pao-Sahpsilas dual integral, a drain current...
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