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We report on the experimental demonstration of a GaAs IQ modulator. The device consists of two “nested” Mach–Zehnder modulators for the inphase and quadrature component and is operated at a symbol rate of 25 GBd. Using QPSK, 16QAM, 32QAM and 64QAM, data rates of up to 150 Gbit/s were encoded on a single carrier in one polarization. The individual Mach–Zehnder modulators, and hence, the IQ-modulator...
We report on the first experimental demonstration of a GaAs IQ-modulator. Data rates of up to 150 Gbit/s are generated using QPSK, 16-QAM, 32-QAM and 64-QAM on a single carrier and polarization.
We present fabrication of the first GaAs electro-optic IQ modulator arrays for high capacity optical transport. Modulators demonstrate >35 GHz bandwidth with 3V Vp. The applicability study reveals suitability for 440Gb/s OOFDM over 1000 km.
We report R&D efforts of the GALACTICO project. New coherent Terabit Ethernet systems will be integrated using silicon-on-insulator rib waveguide and GaAs modulator technology. We report technology basics and first prototype components.
Although photon emission microscope (PEM) systems are widely used in integrated circuit failure analysis, there is no known quantitative baseline to assess and compare the overall sensitivity performance of PEM systems. This paper describes a method to quantify the overall sensitivity of PEM systems based on spectral detectivity measurements. It has been applied to HgCdTe (MCT) and InGaAs PEM systems...
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