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Wire bonding is the most widely used interconnection technology in microelectronics. Aggressive technology scaling has led to device miniaturization resulting in a need for ultra-fine pitch bonding. A deep understanding of the bond formation process will help improve wire bond process reliability and product yield. This paper reports on the study of ball bond (1st bond on the chip) formation process...
Cu wire bonding is one of the hottest trends in electronic packaging due to the cost and the electrical and thermal performance advantages of Cu wire over Au wire. However, there are many challenges to Cu wire bonding, one of which is the increased stress transmitted to the bond pad during ball bonding process. This high stress is not desirable as it leads to pad damage or cratering in the silicon...
Ball bonding processes are optimized on Al pads with a 25.4 ??m diameter Cu wire to obtain maximum average shear strengths of at least 120 MPa. To quantify the direct effect of bond force and ultrasound on the pad stress, ball bonding is performed on test pads with piezoresistive microsensors integrated next to the pad and the real-time ultrasonic signals are measured. By using a lower value of bond...
Ball bonding processes on test chips with Al metallized bonding pads are optimized with one Au and two Cu wire types, all 25 mum diameter, obtaining average shear strengths of more than 120 MPa. The process temperature is about 110degC. The results demonstrate that ball bonds made with Cu wire show at least 15% higher shear strength than those made with Au wire. The estimated maximum shear strength...
A low-noise readout architecture for uncooled microbolometer focal plane arrays is described. A 40times30 uncooled microbolometer focal plane array based on the low-noise ROIC was implemented on silicon using a 0.5 mum CMOS technology. Total output noise voltage is 260 V RMS. Experimental values of voltage responsivities of 3.98 105 V/W on average at 1 Hz modulation frequency have been achieved.
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